Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction

The InGaN-based light-emitting diode (LED) with a clear p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of current crowding phenomenon yields the reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors including lower turn-on voltage, lower parasitic series resistance, and significantly enhanced electrostatic discharge (ESD) performance are presented.

► We fabricate a clear p-GaN/n-GaN barrier junction at MQW/p-GaN interface for hole blocking and confinement effects.
► A better current-spreading ability of the studied device is achieved due to the presence of this barrier junction.
► The suppression of current crowding phenomenon yields the reduced parasitic effect.
► Lower turn-on voltage, lower parasitic series resistance, and enhanced electrostatic discharge performance are presented.