کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540192 871293 2009 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A dual front-end for the new GPS/GALILEO generation in a 0.35 μm SiGe process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A dual front-end for the new GPS/GALILEO generation in a 0.35 μm SiGe process
چکیده انگلیسی

A highly integrated, low-power GALILEO/GPS front-end for the new generation of positioning services has been designed using a 0.35 μm SiGe process. First an analysis of the current and future GPS and GALILEO signals is presented in order to show the interoperability between both systems and to set the requirements for the entire front-end. The receiver has been implemented using a 6 MHz bandwidth low IF architecture whose IF frequency is 4.092 MHz after digitalization. The ESD protected RF front-end exhibits a voltage gain of 103 dB and an SSB noise figure of 3.7 dB, which makes it suitable for high-sensitivity applications. The achieved power consumption is only 66 mW from a 3 V voltage supply and 38 mW if the internal dual-gain LNA is switched off with no compromise with performance and with a minimal amount of external components.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Integration, the VLSI Journal - Volume 42, Issue 3, June 2009, Pages 321–331
نویسندگان
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