کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541013 871370 2014 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A geometric approach to chip-scale TSV shield placement for the reduction of TSV coupling in 3D-ICs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A geometric approach to chip-scale TSV shield placement for the reduction of TSV coupling in 3D-ICs
چکیده انگلیسی

In 3D ICs, through-silicon-vias (TSVs) can suffer from cross coupling if signal integrity is not considered during the design process. In this paper, coupling between TSVs is modeled, and a chip-scale TSV shielding scheme is presented. A geometric model is developed to estimate TSV coupling. The low complexity of the geometric model makes it practical for chip-scale shield placement optimization. Two shield placement algorithms are presented and compared to standard shield placement techniques that use a high complexity circuit model of coupling. Results show that our algorithms are able to reduce the total cross coupling in a layout on average 111%/129% more than standard methods.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Integration, the VLSI Journal - Volume 47, Issue 3, June 2014, Pages 307–317
نویسندگان
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