کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541215 1450478 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs
چکیده انگلیسی

Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are presented. The explicit expressions for threshold voltage and subthreshold swing make the model useful in the practical applications of the device.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 50, April 2016, Pages 60–65
نویسندگان
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