کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541401 871464 2015 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A UWB CMOS low-noise amplifier with noise reduction and linearity improvement techniques
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A UWB CMOS low-noise amplifier with noise reduction and linearity improvement techniques
چکیده انگلیسی

In this paper, a highly linear CMOS low noise amplifier (LNA) for ultra-wideband applications is presented. The proposed LNA improves both input second- and third-order intercept points (IIP2 and IIP3) by canceling the common-mode part of all intermodulation components from the output current. The proposed LNA structure creates equal common-mode currents with the opposite sign by cascading two differential pairs with a cross-connected output. These currents eliminate each other at the output and improve the linearity. Also, the proposed LNA improves the noise performance by canceling the thermal noise of the input and auxiliary transistors at the output. Detailed analysis is provided to show the effectiveness of the proposed LNA structure. Post-layout circuit level simulation results using a 90 nm RF CMOS process with Spectre-RF reveal 9.5 dB power gain, -3 dB bandwidth (BW−3dB) of 8 GHz from 2.4 GHz to 10.4 GHz, and mean IIP3 and IIP2 of +13.1 dBm and +42.8 dBm, respectively. The simulated S11 is less than −11 dB in whole frequency range while the LNA consumes 14.8 mW from a single 1.2 V power supply.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 46, Issue 2, February 2015, Pages 198–206
نویسندگان
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