Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models

In the contemporary and future MOSFETs, NBTI/PBTI-related charge trapping in the presence of underlying statistical variability gives rise to statistical degradation of the coresponding electrical characteristics and figures of merit. We present a framework that integrates the statistical aspect of the NBTI/PBTI degradation, obtained from large-scale 3D ‘atomistic’ device simulations, into statistical compact models. Through a selection of physically relevant compact model parameters, the resulting library of compact models provides high accuracy in representing the statistical NBTI/PBTI degradation effects, across a wide range of degradation conditions. This approach enables circuit designers to verify to what extent particular design solutions will meet the design specifications subject to progressive BTI degradation in the presence of statistical variability.