کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541607 871476 2012 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An ultra-low power RF interface for wireless-implantable microsystems
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
An ultra-low power RF interface for wireless-implantable microsystems
چکیده انگلیسی

This paper presents an efficient radio frequency (RF) front-end for power and data telemetry in biomedical implantable devices. The fully integrated system includes amplitude shift keying (ASK) demodulator, low drop out (LDO) power regulator, full wave voltage rectifier and limiter circuit. The demodulator utilizes a new ultra low power envelope amplifier that removes the need for any voltage comparator or Schmitt trigger circuit. With a carrier frequency of 12 MHz and 1 Mbps data rate, the proposed ASK demodulator achieves a modulation index range from 5% up to 100% while consuming less than 35 μW from induced power. The regulator can provide a maximum stimulation current of 1.2 mA under a ripple suppressed 3.3 V supply. Designed in a 0.18 μm CMOS process, the system totally draws about 35 μA excluding the stimulation current.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 43, Issue 11, November 2012, Pages 848–856
نویسندگان
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