کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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541644 | 871479 | 2014 | 10 صفحه PDF | دانلود رایگان |
In the last few years the Tunnel-FET has become one of the promising devices to be the successor of the MOSFET due to its CMOS compatibility and steep subthreshold slopes (S) below 60 mV/dec. Hetero-junctions at the channel interface are used to improve the on-state current of the device. In this paper a 2D physics-based analytical model for hetero-junction Tunnel-FETs is introduced. It predicts a 2D band-to-band tunneling probability calculation through Wentzel–Kramers–Brillouin approximation (WKB) based on a 2D solution of electrostatics with respect to the device structure and carrier distributions in the device. These results are embedded in a model for the device current. The solutions of the potential, electrical field and the current transfer characteristics of the model are in good agreement with simulation data from the finite-element-method (FEM) simulator TCAD Sentaurus.
Journal: Microelectronics Journal - Volume 45, Issue 9, September 2014, Pages 1144–1153