Robust HSPICE modeling of a single electron turnstile

This paper presents a novel HSPICE circuit model for designing and simulating a single-electron (SE) turnstile, as applicable at the nanometric feature sizes. The proposed SE model consists of two nearly similar parts whose operations are independent of each other; this disjoint feature permits the accurate and reliable modeling of the sequential transfer of electrons through the turnstile in the storage node (modeled on a voltage level basis). It therefore avoids the transient (current-based) nature of a previous model, thus ensuring robustness in simulated operation. The model has been simulated and results show that it can robustly operate at 32 and 45 nm with excellent stability in its operation. Extensive simulation results are presented to substantiate the advantages of using the proposed model with respect to changes in the circuit model parameters as related to capacitances, feature size and voltages.