Total dose radiation effects of hybrid bulk/SOI CMOS active pixel with buried channel SOI source follower

• CMOS active pixel which uses buried channel SOI NMOS Source Flower (SF) is studied.
• CMOS active pixel optimized by using in-pixel buried-channel SOI transistor.
• The dark random noise of the pixel with buried channel SOI NMOS SF is reduced under the radiation.
• The pixel with buried-channel SOI NMOS SF has an improved output swing under the radiation.

A CMOS active pixel with pinned photodiode which used in-pixel buried-channel (BC) transistor has been reported, and the characteristic of CMOS image sensor with in-pixel buried-channel transistor was carried out. In this paper, we have a research on a hybrid bulk/silicon-on-insulator (SOI) CMOS active pixel with pinned photodiode which use buried channel SOI NMOS Source Flower (SF) by simulation. We study the basic characteristics of buried-channel SOI NMOS and the characteristics of CMOS active pixel optimized by using in-pixel buried-channel SOI transistor under radiation. The results show that, compared to the conventional active pixel with the standard surface-channel (SC) SOI NMOS SF, the dark random noise of the pixel which uses in-pixel buried channel SOI NMOS SF can be reduced under the radiation and the output swing is improved.

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