Influence of operation conditions on true-static DC characteristics and on electro-thermal transient states in silicon carbide Merged PiN Schottky diodes.

In this paper, measured and calculated non-isothermal DC characteristics of silicon carbide MPS devices are investigated, with special attention paid on critical parameters, such as maximum current and junction temperature at which a thermal runaway may occur. Electro-thermal transient states in single MPS devices (forward surge current tests) and in the simple Greatz rectifier are simulated and compared to measurements. Various electro-thermal models of SiC SBDs, with a simplified, effective procedure for calculations of junction temperature are proposed.