کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541792 | 871493 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of operation conditions on true-static DC characteristics and on electro-thermal transient states in silicon carbide Merged PiN Schottky diodes.
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of operation conditions on true-static DC characteristics and on electro-thermal transient states in silicon carbide Merged PiN Schottky diodes. Influence of operation conditions on true-static DC characteristics and on electro-thermal transient states in silicon carbide Merged PiN Schottky diodes.](/preview/png/541792.png)
چکیده انگلیسی
In this paper, measured and calculated non-isothermal DC characteristics of silicon carbide MPS devices are investigated, with special attention paid on critical parameters, such as maximum current and junction temperature at which a thermal runaway may occur. Electro-thermal transient states in single MPS devices (forward surge current tests) and in the simple Greatz rectifier are simulated and compared to measurements. Various electro-thermal models of SiC SBDs, with a simplified, effective procedure for calculations of junction temperature are proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 44, Issue 11, November 2013, Pages 1044–1049
Journal: Microelectronics Journal - Volume 44, Issue 11, November 2013, Pages 1044–1049
نویسندگان
Aneta Hapka, Wlodzimierz Janke,