A resonant half bridge driver with novel common mode rejection technique implemented in 1.0 μm high voltage (650 V) DIMOS process

In this paper, a half bridge convert driver IC with novel common mode rejection technique is designed and implemented in 1.0 μm high voltage (650 V) Dielectric Isolation MOS (DIMOS) process. The Designed IC is suitable for medium power (under 500 W) applications such as consumer electronics. Half bridge converter driver IC with a novel common mode rejection technique, which is composed of noise filter and set inhibitor, shows high dv/dt noise immunity up to 66.67 V/ns. Spectre simulation was performed to verify the electrical characteristics of the designed IC.