کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542000 | 871513 | 2012 | 8 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Numerical modeling of MOS transistor with interconnections using lumped element-FDTD method Numerical modeling of MOS transistor with interconnections using lumped element-FDTD method](/preview/png/542000.png)
A detailed three-dimensional (3-D) full-wave time-domain simulation model is presented for the analysis of an active semiconductor device. Microwave analysis of the nMOS transistor using monolithic microwave integrated circuit (MMIC) is simulated. A three-dimensional finite-difference time-domain (3D-FDTD) scheme is adopted to describe the circuit passive part, whereas numerical device simulation techniques are employed for the active semiconductor devices. The proposed algorithm provides the time and space distribution of the unknown functions electrostatic potential, carriers' concentration, and current density for the MOS transistor. Fast Fourier transform (FFT) analysis is performed on the obtained time response to calculate the scattering matrix of the S-parameters and phase frequency dependencies. Finally, the obtained results are presented and show a good agreement with those based on a hydrodynamic model.
Journal: Microelectronics Journal - Volume 43, Issue 12, December 2012, Pages 995–1002