A novel surface potential-based short channel MOSFET model for circuit simulation

In this paper a novel analytical approximation method for surface potential (ψsψs) calculation in compact MOSFET model is presented. It achieves excellent accuracy and good calculation speed over all regions from accumulation to strong inversion. With this approximation method, a surface potential-based compact model for short channel MOSFET is developed. Comparison with measured data is also presented to validate the new model.

► A novel analytical approximation method of calculating surface potential for compact MOSFET model is developed.
► The approximation achieves excellent accuracy and good calculation speed over all operation regions.
► A new surface potential-based short channel MOSFET model is developed.
► Model veri_cation is presented to validate the new model.