کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542147 | 1450484 | 2009 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The results of local anodic oxidation (LAO) on the thin GaMnAs layers are reported. The ferromagnetic GaMnAs layers were prepared by low-temperature molecular beam epitaxy (MBE) growth in a Veeco Mod Gen II machine. The LAO process was performed with the atomic force microscope (AFM) Smena NT-MDT placed in the sealed box with the controlled humidity in the range 45-80%. The oxide was grown in the semi-contact mode of the AFM. The sample was positively biased with respect to the AFM tip with the bias from 6 to 24 V. The conductive diamond-coated AFM tips with the radius 30 nm were utilized for the oxidation. The tip speed during the oxidation was changed from 400 nm/s to 1.5 μm/s. The tip force was also changed during the oxidation. The height of oxide nanolines increases with applied voltage from 3 to 18 nm. The width of these lines was approximately 100 nm at half-maximum. The magnetoresistance measurements of the sample with 1D lateral constriction by the LAO and the micromagnetic simulations of the structure with two lateral constrictions are presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 40, Issues 4â5, AprilâMay 2009, Pages 697-705
Journal: Microelectronics Journal - Volume 40, Issues 4â5, AprilâMay 2009, Pages 697-705
نویسندگان
J. Voves, Z. Å obáÅ, M. JanouÅ¡ek, V. Komarnickij, M. Cukr, V. Novák,