کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542230 871534 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electric field-enhanced metal-induced lateral crystallization and P-channel poly-Si TFTs fabricated by it
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Electric field-enhanced metal-induced lateral crystallization and P-channel poly-Si TFTs fabricated by it
چکیده انگلیسی

The poly-Si thin film was obtained by electric field-enhanced metal-induced lateral crystallization technique at low temperature. Raman spectra, X-ray diffraction (XRD) and scan electron microscope (SEM) were used to analyze the crystallization state, crystal structure and surface morphology of the poly-Si thin film. Results show that the poly-Si has good crystallinity, and the electric field has the effect of enhancing the crystallization when DC electric voltage is added to the film during annealing. Secondary ion mass spectroscopy (SIMS) shows that the metal Ni improves the crystallization by diffusing into the a-Si thin film, so the crystallization of the lateral diffused region of Ni is the best. The p-channel poly-Si thin film transistors (TFTs) were fabricated by this large-size grain technique. The IDS−VDS and the transfer characteristics of the TFTs were measured, from which, the hole mobility of TFTs was 65 cm2/V s, the on and off current ratio was 5×106. It is a promising method to fabricate high-performance poly-Si TFTs at low temperature for applications in AMLCD and AMOLED.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issue 10, October 2008, Pages 1189–1194
نویسندگان
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