کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542263 871540 2010 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design of 20 GHz high performance LC-VCOs in a 52 GHz fT SiGe:C BiCMOS technology
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Design of 20 GHz high performance LC-VCOs in a 52 GHz fT SiGe:C BiCMOS technology
چکیده انگلیسی

The design and analysis of fully integrated 20 GHz voltage controlled oscillators (VCOs) for low cost and low power communication system are presented in this paper. Two differential topographies have been studied: balanced Colpitts VCO and LC-VCO using a cross-coupled differential pair. We have focused on oscillation frequency, tuning range, phase noise, output power optimization and buffer stage specifications. SiGe:C hetero-junction bipolar transistors of a 52 GHz cut-off frequency have been used and produced via a monolithic BiCMOS technology.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 41, Issue 1, January 2010, Pages 41–50
نویسندگان
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