A model for the resonant tunneling semiconductor-controlled rectifier

A new switch called a resonant-tunneling-semiconductor-controlled rectifier (RT-SCR) has been proposed. A two-transistor model is used for the device. One of the transistors in the two-transistor model is assumed to be a resonant tunneling transistor (RTT), while the other transistor is taken to be a bipolar transistor. The current–voltage relationships of the device have been numerically obtained and compared with the traditional thyristor characteristics. The new device requires smaller turn-on gate voltage than a comparable traditional device for the same gate current. This indicates that in comparison with the traditional thyristor, a smaller control current may be used to turn on the device at a particular voltage.