Scalable synthesis of graphene on single crystal Ir(111) films

► Graphene was grown on thin Ir(111) films supported on YSZ-buffered Si(111) wafers. ► The Ir(111) films were single crystalline, the mosaic spread was below 0.2°. ► The Ir(111) films were thermally stable up to 1100 °C. ► Lattice-aligned graphene was grown by low pressure CVD of ethylene at 800 °C. ► At 700 °C and higher pressure rotated graphene phases were observed by STM.