Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

► Growth of a stoichiometric and As-free GaN ultrathin film on a GaAs(001) substrate. ► Use of a low power glow discharge nitrogen plasma source. ► Crystallization in c-GaN by annealing at 620 °C. ► Passivation effect of the GaN ultra-thin film for the protection of GaAs surfaces.