Monte Carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes

► We model 3C-SiC growth on hexagonal polytypes through Monte Carlo simulations. ► Proper surface pre-growth treatments are the key to grow high quality films. ► Large miscut angles (~ 8°) can enlarge the 3C-growth process window. ► We find that the 6H substrates are superior to the 4H ones.