کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5422876 | 1507944 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nano-structures developing at the graphene/silicon carbide interface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Nano-structures developing at the graphene/silicon carbide interface Nano-structures developing at the graphene/silicon carbide interface](/preview/png/5422876.png)
چکیده انگلیسی
We use scanning tunneling microscopy and spectroscopy to study defects on epitaxial graphene grown on a 4H-SiC(000-1) C-face substrate. At the graphene/SiC interface, we discover a few isolated small areas covered by nano-objects confined vertically and forming mesas, suggestive of packed carbon nanotubes and leading to electronic interface states. Nano-crack defects are also found at the SiC surface. They are covered with an unbroken graphene layer going deep into the crack showing no electronic interface state, and thus would probably not affect the carrier mobility.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 605, Issues 5â6, March 2011, Pages L6-L11
Journal: Surface Science - Volume 605, Issues 5â6, March 2011, Pages L6-L11
نویسندگان
S. Vizzini, H. Enriquez, S. Chiang, H. Oughaddou, P. Soukiassian,