Step bunching and step “rotation” in homoepitaxial growth of Si on Si(110)-16 × 2

► Step bunching and step rotation are observed in Si/Si(110)-16 × 2 homoepitaxy. ► Step pattern may be tuned by choosing the direction of the electric current. ► Polarity of the applied electrical field has almost no effect the step motion. ► Imperfect matching of the (16 × 2) reconstruction domains induces step bunching.