کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5423084 1507950 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
SEM/EDS study of metal-assisted oxide desorption
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
SEM/EDS study of metal-assisted oxide desorption
چکیده انگلیسی
Strongly-enhanced desorption of a thick (100 nm) silicon oxide layer by the pre-sputtering of a thin germanium surface film was observed under high-temperature vacuum annealing conditions. High-resolution SEM imaging reveals that germanium nanoislands are first formed on the sample surface, and that these then act as nucleation centres for the formation of voids in the oxide, leading to a rapid desorption of the silicon oxide layer. EDS analysis of the silicon surface after oxide decomposition shows that the introduced germanium impurities are fully consumed in this desorption process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 604, Issues 17–18, 30 August 2010, Pages 1531-1535
نویسندگان
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