کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542334 1450488 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Prospective development in diffusion barrier layers for copper metallization in LSI
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Prospective development in diffusion barrier layers for copper metallization in LSI
چکیده انگلیسی

The most recent development together with some challenging opportunities on barrier layers for copper metallization has been reviewed. This review study mainly focuses on the technology trends in interconnect metallization, with emphasis on barrier layer materials, mechanism that dominates diffusion in barrier layer materials, and promising candidate barrier layers for copper metallization in LSIs. The applicability of different materials as diffusion barriers in copper-based interconnects has also been assessed for practical usage.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issues 6–7, June–July 2007, Pages 777–782
نویسندگان
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