کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423402 | 1507933 | 2012 | 8 صفحه PDF | دانلود رایگان |

Oxygen vacancy effect on the electronic state of Pt/NiO/Pt capacitor-like system is theoretically investigated by density functional theory (DFT) based first-principles calculations. The potential energy profile for electrons at the interface between Pt and NiO is found to play a major role on the transport properties alternations where conduction path begin to construct. Oxygen vacancies effect is summarized in the induction of a spatially localized spin-polarized state near the Fermi level of the surrounding Ni ions. Also, electron transport through O vacancy filaments (conduction paths) is via s-orbital sub-bands. We have found that the absence or presence of a vacancy near the interface at the edges of the vacancy filament causes a conductance jump from ~0 to 1e2/h respectively which corresponds to clearly observable switching.
⺠We simulate using DFT the interface Pt/NiO/Pt structure. ⺠The study is focused on the effect of O vacancy in atomic scale. ⺠The vacancy presence at the edge of the vacancy filament causes a conductance jump. ⺠A ballistic conductance jump of 1e2/h was found. ⺠Transport through O vacancy filaments is via s-orbital sub-bands.
Journal: Surface Science - Volume 606, Issues 3â4, February 2012, Pages 239-246