Keywords: تعویض مقاومت; CeO2 nanostructure; Oxygen vacancy; Catalytic properties; Resistance switching;
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Keywords: تعویض مقاومت; Resistance switching; Solution processed; Cr-doped SrTiO3; Oxygen vacancies;
Keywords: تعویض مقاومت; DFT; RRAM; Transition metal oxides; Resistance switching; Oxygen vacancy;
Keywords: تعویض مقاومت; Resistance switching; Memristor; Perovskite oxide; Ferroelectric tunneling junction
Keywords: تعویض مقاومت; Spectroscopic ellipsometry; Resistance switching; Manganite; PCMO; RF magnetron sputtering;
Keywords: تعویض مقاومت; Diffusion; Ion migration; Noise; Power spectral density; Resistance switching; Retention loss;
Keywords: تعویض مقاومت; SnO2; Resistance switching; Nonvolatile memory; Polyimide; Graphene;
Electrode effect regulated resistance switching and selector characteristics in Nb doped SrTiO3 single crystal for potential cross-point memory applications
Keywords: تعویض مقاومت; SrTiO3; Resistance switching; Selector characteristics;
Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices
Keywords: تعویض مقاومت; ReRAM; Silicon oxide; Intrinsic; Resistance switching; STEM;
Reproducible switching effect of an all-inorganic halide perovskite CsPbBr3 for memory applications
Keywords: تعویض مقاومت; All-inorganic halide perovskite; CsPbBr3; Resistance switching; Memory devices;
Resistance switching mechanism of La0.8Sr0.2MnO3−δ thin films
Keywords: تعویض مقاومت; Oxygen vacancies; La0.8Sr0.2MnO3 films; Resistance switching
Influence of 120 MeV Au+9 ions irradiation on resistive switching properties of Cr:SrZrO3/SRO junctions
Keywords: تعویض مقاومت; RRAM; Resistance switching; Swift heavy ion irradiation; Perovskite oxides; Chemical solution deposition
Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films
Keywords: تعویض مقاومت; Bi4Ti3O12; Resistance switching; Dielectric; Annealing temperature; Sol–gel
RESET-first unipolar resistance switching behavior in annealed Nb2O5 films
Keywords: تعویض مقاومت; Resistance Switching; Niobium dioxide; Niobium Pentoxide; Unipolar; RESET-first; Oxygen; Annealing; Crystalline phase
Forming time of conducting channels in double-layer Pt/Ta2O5/TaOx/Pt and single-layer Pt/TaOx/Pt resistance memories
Keywords: تعویض مقاومت; Dielectric breakdown; Resistance random-access memory (RRAM); Resistance switching
The effect of Sr concentration on resistive switching properties of La1 − xSrxMnO3 films
Keywords: تعویض مقاومت; GAXRD; XPS; LSMO; Sr contents; Resistance switching; ReRAM
Resistance switching of copper-doped tantalum oxide prepared by oxidation of copper-doped tantalum nitride
Keywords: تعویض مقاومت; Copper; Tantalum oxide; Thin film; Plasma oxidation; Resistance switching
Influence of thermal treatment on the resistance switching of SrTiO3:Nb single crystal
Keywords: تعویض مقاومت; Oxide materials; Surfaces and interfaces; Thermal treatment; Electroforming; Resistance switching;
Metal and annealing atmospheres dependence of resistive switching in metal/Nb0.7wt%-SrTiO3 interfaces
Keywords: تعویض مقاومت; Metal/Nb-doped SrTiO3 interface; Resistance switching; Conduction mechanism
Unipolar resistance switching and abnormal reset behaviors in Pt/CuO/Pt and Cu/CuO/Pt structures
Keywords: تعویض مقاومت; Copper oxide (CuO); Thin films; Resistance switching
Oxygen vacancy effects on electronic structure of Pt/NiO/Pt capacitor-like system
Keywords: تعویض مقاومت; Density functional theory; Oxygen vacancy filaments; Resistance switching; Conduction paths;
Reproducible resistance switching for BaTiO3 thin films fabricated by RF-magnetron sputtering
Keywords: تعویض مقاومت; Resistance random access memory; Resistance switching; Barium titanate; Perovskite; Sputtering; X-ray diffraction; Electrical properties and measurements
Bipolar resistive switching of chromium oxide for resistive random access memory
Keywords: تعویض مقاومت; Cr2O3 thin film; Resistance switching; Nonvolatile memory
Resistance switching in electrodeposited polycrystalline Fe3O4 films
Keywords: تعویض مقاومت; Electrodeposition; Data storage; Magnetite; Resistance switching
Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure
Keywords: تعویض مقاومت; Resistance switching; FeOx
Device size dependence of resistance switching performance in metal/manganite/metal trilayers
Keywords: تعویض مقاومت; Resistance random access memory (ReRAM); Resistance switching; Metal/insulator interfaces; Transition metal oxide;
Resistance switching properties in Pt/SrTiO3:Nb Schottky junctions studied by admittance spectroscopy
Keywords: تعویض مقاومت; SrTiO3; Doping; Schottky junction; Resistance switching
Size dependence of TiN/HfO2/Ti MIM ReRAM resistance states: Model and experimental results
Keywords: تعویض مقاومت; Resistance switching; Metal oxide; Damage
Bistable resistance switching in surface-oxidized C12A7:e− single-crystal
Keywords: تعویض مقاومت; C12A7; Oxygen ion conduction; Reduction treatment; Electric field doping; Resistive random access memory (ReRAM); Resistance switching
Resistive switching in Cr-doped SrTiO3: An X-ray absorption spectroscopy study
Keywords: تعویض مقاومت; Resistance switching; SrTiO3; X-ray absorption spectroscopy (XAS); Valence change; Oxygen vacancies
Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films
Keywords: تعویض مقاومت; 72.20.âi; 72.60.+g; 73.40.Sx; 73.50.Fq; 73.50.Gr; TiO2 thin films; Hysteretic I-V curves; Resistance switching;
Metalorganic chemical vapor deposition of metal oxide films exhibiting electric-pulse-induced resistance switching
Keywords: تعویض مقاومت; MOCVD; Resistance switching; Resistance random access memory; Manganite;
On the switching mechanism in Rose Bengal-based memory devices
Keywords: تعویض مقاومت; 72.80.Le; 85.65.+h; 85.30.−zImpedance switching; Resistance switching; Filaments; Rose Bengal; Indium tin oxide; Aluminum
Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5
Keywords: تعویض مقاومت; Resistance switching; Pulsed laser deposition; Retention; Conduction mechanism; Nb2O5;
A model for non-volatile electronic memory devices with strongly correlated materials
Keywords: تعویض مقاومت; 85.30.Tv; 85.30.De; 73.40.âc; Resistance switching; Non-volatile memory;