The effect of Sr concentration on resistive switching properties of La1 − xSrxMnO3 films

La1 − xSrxMnO3 (LSMO, x = 0.1, 0.3, and 0.5) thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique at a substrate temperature of 450 °C. The effects of Sr contents on the physical, chemical, and electrical properties of films were systematically investigated. X-ray diffraction results showed that the growth orientation and crystallinity of films were affected by Sr content. The Mn valence transition was analyzed using X-ray photoelectron spectroscopy. The conversion of Mn3 + valence to Mn4 + with increasing Sr2 + concentration generated more Mn3 +–O2 −–Mn4 + bonds, and caused initial resistance change of LSMO films. The largest resistive switching of the La0.7Sr0.3MnO3 film having a (110) plane preferred orientation is discussed.

► Sputtered La1 − xSrxMnO3 (LSMO) films with x = 0.1, 0.3, and 0.5 were prepared.
► The Sr content affects on the growth structure and vacancies.
► LSMO films show (110) preferred orientation with increasing Sr content to 0.3.
► The oxygen terminated (110) oriented film shows the largest resistance switching.