Forming time of conducting channels in double-layer Pt/Ta2O5/TaOx/Pt and single-layer Pt/TaOx/Pt resistance memories

• We measured the forming time in double-layer and single-layer resistance memories.
• The forming times revealed nonlinearities with variation of the applied voltage.
• The forming times decreased with increase of temperature.
• The forming process can be attributed to thermally assisted dielectric breakdown.

Oxide double-layer systems have recently attracted much attention, owing to their excellent performance as nonvolatile bipolar resistance memory. In this study, we measured the time required to form conducting channels (i.e., the forming time) in double-layer Pt/Ta2O5/TaOx/Pt cells and single-layer Pt/TaOx/Pt cells by applying a pulse-waveform voltage signal. The voltage amplitude dependence of forming times in both samples revealed nonlinearities with nine orders of magnitude. By investigating their temperature dependence, we found that channel formation for both samples can be attributed to thermally assisted dielectric breakdown.