Influence of thermal treatment on the resistance switching of SrTiO3:Nb single crystal

The influence of thermal treatment on the resistance switching of SrTiO3:Nb (0.05 and 0.5 wt.% Nb) single crystals has been investigated. Analyzing current-voltage and capacitance-frequency curves of samples demonstrate that thermal treatment could increase interface state by improving the chemisorbed oxygen concentration on the surface. Switching time of Pt/SNTO junction with both the thermal treatment and the electroforming would be further shortened. The model of resistance switching effect is attributed to the trapping/detrapping electrons at the interface. These results above are useful for further comprehension of resistance switching mechanism.