کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5423438 1507933 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of substrate temperature on growth of para-sexiphenyl thin films on Ir{111} supported graphene studied by LEEM
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
The influence of substrate temperature on growth of para-sexiphenyl thin films on Ir{111} supported graphene studied by LEEM
چکیده انگلیسی
► Para-sexiphenyl growth on graphene and Ir was observed in real time using LEEM. ► The structure of individual 6P features was analyzed using μLEED. ► At 320 K and 352 K Stranski-Krastanov growth of flat lying 6P is found on graphene. ► Islands formed by upright standing molecules are found on Ir(111). ► At 405 K only propagation of upright 6P islands, nucleated at graphene rims on Ir.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 606, Issues 3–4, February 2012, Pages 475-480
نویسندگان
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