Tin-stabilized (1 × 2) and (1 × 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

► We elucidate the atomic structure of Sn-stabilized GaAs/InAs(100)(1×2)/(1×4) surfaces. ► SnGa- and SnAs-dimer models were found to be energetically favorable for GaAs(100). ► For InAs(100), only SnIn-model is energetically favorable at 0 K. ► STM- and photoemission measurements support the presence of SnIII-structures.