Quadratic electro-optic effects and electro-absorption process in InGaN/GaN cylinder quantum dots

We carried a detailed calculation of quadratic electro-optic effects (QEOE) and electro-absorption (EA) process as a function of pump photon energy ħω in InGaN/GaN cylinder quantum dots. The third-order susceptibility dispersion behaviors of direct current are obtained. It is found that with the increase of the quantum dot (QD) height and radius, the magnitudes of the real part of the quadratic electro-optic susceptibility and the imaginary part of the EA susceptibility increase at the resonant frequency, and its resonant position shifts to the lower energy region. In addition, lower In content induces larger χ(3).