Device preparation and characterization of drain current transients in static induction micro transistors

Static induction transistors (SITs) based on copper phthalocyanine (CuPc) were prepared and the dependence of static and transient characteristics on the edge features of the patterned Al gate electrode was studied. Devices having Al gate electrodes deposited with and without a gap between a shadow mask and the substrate were prepared. Devices prepared in the presence of the gap produces a thin transparent edge for the Al gate electrode which enhances the modulation of the drain current by the gate voltage. However, a repetitive slow transient of the drain current was observed for the devices using gap. This transient is considered to be due to the charge carrier trapping at Al dots in the active channel region.