کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5423882 1395805 2009 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Intra-atomic charge re-organization at the Pb-Si interface: Bonding mechanism at low coverage
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Intra-atomic charge re-organization at the Pb-Si interface: Bonding mechanism at low coverage
چکیده انگلیسی
Lead submonolayers on the Si(1 1 1) surface in ordered structures of symmetry (3×3)R30° were studied with photoelectron diffraction and ab initio calculations. At 1/3 monolayer coverage Pb atoms flip between up and down positions. This fluctuating geometry is connected with the charge redistribution in the basic triangular bipyramid formed by an adsorbed Pb atom and its four closest Si neighbors. The dynamic balance is reflected in the switching of bipyramids from semiconductor to metal character as a result of the interaction between an unsaturated Pb atom in the T4 position and a saturated Si atom beneath. Substitution of a Pb atom in the 1/3 monolayer coverage with a Si atom results in stabilisation of the neighboring Pb atoms in the up position which is characteristic for Pb atoms in the 1/6 monolayer mosaic phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 603, Issue 18, 15 September 2009, Pages 2861-2869
نویسندگان
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