کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542395 871552 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electron translocation and field emission in printed CNT film by high-temperature sintering and post-treatment
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Electron translocation and field emission in printed CNT film by high-temperature sintering and post-treatment
چکیده انگلیسی

The main problem of printed carbon nanotube film (CNTF) is that emitters do not have distributed uniformity. CNT was buried in leftover binding materials, which needs to be removed by fitted sintering and post-treatment. A new paste for printed CNTF was developed. Tunneling coefficients of leftover potential barrier were calculated respectively by the numerical method. The electrons translocation results through potential barrier between CNTs in calculated CNTF were tested by an experiment. A novel post-treatment, including high-temperature sintering and mechanical shearing and blowing, was performed to evidently improve the electron translocation and field emission current density of CNTF. Excellent emission prosperities were exhibited: stable current density, distributed uniformity emitters and long lifetime. The treatment of high-temperature sintering and mechanical shearing and blowing, may be an important prerequisite for future field emission display.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 40, Issue 8, August 2009, Pages 1166–1169
نویسندگان
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