کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424014 | 1395811 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pentacene islands grown on ultra-thin SiO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Pentacene islands grown on ultra-thin SiO2 Pentacene islands grown on ultra-thin SiO2](/preview/png/5424014.png)
چکیده انگلیسی
Ultra-thin oxide (UTO) films were grown on Si(1 1 1) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The apparent height of the first layer is 1.57 ± 0.05 nm, indicating “standing up” pentacene grains in the thin film phase were formed. Pentacene is molecularly resolved in the second and subsequent molecular layers. The measured in-plane unit cell for the pentacene (0 0 1) plane (ab plane) is a = 0.76 ± 0.01 nm, b = 0.59 ± 0.01 nm, and γ = 87.5 ± 0.4°. The films are unperturbed by the UTO's short-range spatial variation in tunneling probability, and reduce its corresponding effective roughness and correlation exponent with increasing thickness. The pentacene surface morphology follows that of the UTO substrate, preserving step structure, the long range surface rms roughness of â¼0.1 nm, and the structural correlation exponent of â¼1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 603, Issue 3, 1 February 2009, Pages L27-L30
Journal: Surface Science - Volume 603, Issue 3, 1 February 2009, Pages L27-L30
نویسندگان
B.R. Conrad, W.G. Cullen, B.C. Riddick, E.D. Williams,