کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542414 | 871553 | 2006 | 8 صفحه PDF | دانلود رایگان |
We present in this work an analysis of the low temperature operation of Graded-Channel fully depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications, in the range of 100–300 K. This analysis is supported by a comparison between the results obtained by two-dimensional numerical simulations and measurements in the whole temperature range under study. The Graded-Channel transistor presents higher Early voltage if compared to the conventional fully depleted SOI nMOSFET, without degrading the transconductance over drain current, at all studied temperatures, leading to a gain larger than 20 dB compared to the conventional SOI. The resulting higher gain lies in the improvement of the electric field distribution and impact ionization rate by the graded-channel structure.
Journal: Microelectronics Journal - Volume 37, Issue 2, February 2006, Pages 137–144