کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424251 | 1507958 | 2009 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Etching of silicon in fluoride solutions
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The development and status of what is commonly called the Gerischer mechanism of silicon etching in fluoride solutions is reviewed. The two most widely used and studied wet etchants of silicon are Fâ and OHâ. Their mechanisms of atom removal share many things in common; in particular, chemical passivation by a hydrogen-terminated surface plays an important role in both. Crucially, however, their initiation steps are different, and this leads to important differences in the structures of the materials produced by the etchants. The initiation of etching by Fâ is electrochemical in nature, responding to the electronic structure of the Si, and is, therefore, a self-limiting reaction that can produce nanocrystalline porous silicon. Hydroxide etching destroys porous silicon because its initiation step is a catalytic chemical reaction and not a self-limiting process. A number of unanswered questions regarding the dynamics of fluoride etching are highlighted.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 603, Issues 10â12, 1 June 2009, Pages 1904-1911
Journal: Surface Science - Volume 603, Issues 10â12, 1 June 2009, Pages 1904-1911
نویسندگان
Kurt W. Kolasinski,