Development of electronic structure of Ni thin films on Cu(0Â 0Â 1) surfaces

We have traced the development of the Ni electronic structure with thickness variation on flat and nano-structured Cu(0 0 1) surfaces by means of photoemission spectroscopy. The binding energy of the Ni 2p3/2 main peak and satellite peak is found to have shifted monotonically in the direction opposite to each other, with the increase of Ni coverage. The reduced binding energy of the thin film's main peak is strongly correlated to the Cu 4s/Ni 3d interfacial hybridization effect (s/d IHE) and the narrowing of the d band with the reduction of dimensions, while the increased satellite binding energy results from the combination of interface hybridization and expansion of an extended 4s-like state towards the vacuum. The center of the Ni dxy band is predicted to shift closer to the Fermi level with increasing film thickness. Enhanced satellite intensity in thin films is observed, correlating to the narrowing of the d band with decreased film thickness. Through comparison of Ni films grown on flat versus nano-structured Cu(0 0 1) surfaces, the mixing of Cu and Ni atoms is found to be enhanced at the terrace edge region and consequently a larger s/d IHE is predicted for Ni on the nano-structured surface.