Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material.