کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424521 | 1395827 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Germanium interactions with Si-etched silicon dioxide
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کلمات کلیدی
Etching - اچینگSilicon oxides - اکسید سیلیکونtemperature programmed desorption - درجه حرارت برنامه ریزی شده desorptionHot-wire chemical vapor deposition - رسوب بخار شیمیایی داغ سیمX-ray photoelectron spectroscopy - طیف سنجی فوتوالکتر اشعه ایکسdefects - عیوبSurface chemical reaction - واکنش شیمیایی سطحgermanium - ژرمانیوم
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Germanium interactions with Si-etched silicon dioxide Germanium interactions with Si-etched silicon dioxide](/preview/png/5424521.png)
چکیده انگلیسی
The structure and activity of defects resulting from the etching reaction between Si adatoms and SiO2 was probed by desorption of GeHx (x = 1, 2, 3) dosed by hot-wire chemical vapor deposition. GeHx has been shown, in previous studies, to be inert to the SiO2 surface and only accumulates through the formation of Ge clusters formed by reactions between adsorbed GeHx species. Temperature programmed desorption (TPD) of GeHx off SiO2 surfaces subjected to varying degrees of etching reveals that the surface is activated toward GeHx resulting in the deposition of Ge. Examination of the H2 signal during GeHx TPD, reveals two distinct peaks, one from 475 K to 675 K and another from 750 K to 900 K. The first H2 peak is associated with the reaction of GeHx species with the hydrated form of the defect created by the Si etching reaction, while the second H2 peak results from the reaction of GeHx species with Ge captured in the earlier reaction. Annealing a Si-etched SiO2 surface under a diborane atmosphere deactivates the defect toward GeHx, while also deactivating intrinsic hydroxyl groups towards the adsorption of GeHx. A defect structure is proposed composed of vicinal and geminal hydroxyl groups flanking a Si vacancy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 602, Issue 18, 15 September 2008, Pages 3071-3076
Journal: Surface Science - Volume 602, Issue 18, 15 September 2008, Pages 3071-3076
نویسندگان
Wyatt A. Winkenwerder, John G. Ekerdt,