کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5424745 | 1395835 | 2009 | 4 صفحه PDF | دانلود رایگان |
In this letter we report on the formation of long-range surface disorder features during the growth by molecular beam epitaxy (MBE) of homoepitaxial GaAs (0 0 1) films having the β2(2 Ã 4) reconstruction. Observations were made in real-time at the growth temperature using reflection high energy electron diffraction (RHEED) and analyzed kinematically. We show that kinks (cooperative shifts of whole columns of 2 Ã 4 units along the [1 1 0] direction) form rapidly as growth commences and that the antiphase domain structure present on the substrate prior to growth as a result of the arrangement of As-As dimers persists. This produces a surface with two types of long-range disorder. We speculate on the role of incident Ga atoms on this process.
Journal: Surface Science - Volume 603, Issue 1, 1 January 2009, Pages L1-L4