کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542479 871556 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Transition behaviors from coupled-to-uncoupled CdTe-ZnTe symmetric versus asymmetric double quantum wells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Transition behaviors from coupled-to-uncoupled CdTe-ZnTe symmetric versus asymmetric double quantum wells
چکیده انگلیسی
The coupling behaviors between symmetric versus asymmetric CdTe-ZnTe double quantum wells (DQWs) are theoretically investigated based on the application of the sp3s* tight-binding method including the spin-orbit interaction. This method is used to calculate the band structures of the (CdTe)Nw1(ZnTe)Nb(CdTe)Nw2-ZnTe DQWs versus the barrier thickness (Nb), and well widths (Nw1 and Nw2). Special attention was given to the decoupling behaviors between the wells in both symmetric and asymmetric cases. The decoupling of the asymmetric DQWs is found to occur at a critical barrier thickness (of about Lbcrit≃18A˚) shorter than the case of symmetric DQWs (of about Lbcrit≃38A˚) because, in the former case, the bound state wavefunctions have more tendency to localize in one of the two wells. Our modelling of asymmetric DQWs (with Nw1=6 and Nw2=3) yields results in excellent agreement with the available experimental photoluminescence data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 40, Issue 3, March 2009, Pages 523-526
نویسندگان
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