Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator

In this paper, we present a multi-island single-electron transistor (MISET) model based on the orthodox theory and solving the master equation. Using SIMON simulator, we investigate the electrical characteristics of single-electron transistors (SETs) based on multiple islands and show the temperature dependence of the Coulomb oscillation of the SET with one to six islands as a function of gate voltage Vg in the temperature range from T=5 to 50 K. Values of current tend to increase proportionally with temperature. For a high drain voltage, the MISET behaved as a single-island device. This is probably because the multiple islands were electrically enlarged and merged into a single island owing to the high applied drain voltage. Finally, we compare the advantages of MISET face to single-island SETs with identical dimensions of islands.