کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542504 | 871556 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nonparabolicity effects and the spin-split electron dwell time in symmetric III-V double-barrier structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Nonparabolicity effects and the spin-split electron dwell time in symmetric III-V double-barrier structures Nonparabolicity effects and the spin-split electron dwell time in symmetric III-V double-barrier structures](/preview/png/542504.png)
چکیده انگلیسی
We start from the fourth-order nonparabolic and anisotropic conduction band bulk dispersion relation to obtain a one-band effective Hamiltonian, which we apply to an AlGaSb symmetric double-barrier structure with resonant energies significantly (more than 200Â meV) above the well bottom. The spin-splitting is described by the k3 Dresselhaus spin-orbit coupling term modifying only the effective mass of the spin eigenstates in the investigated structure. Apart from the bulk-like resonant energy shift due to the band nonparabolicity, we obtain a substantial shift depending on the choice of boundary conditions for the envelope functions at interfaces between different materials. The shift of resonant energy levels leads to the change of spin-splitting and the magnitude of the dwell times. We attempt to explain the influence of both the nonparabolicity and boundary conditions choice by introducing various effective masses.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 40, Issue 3, March 2009, Pages 611-614
Journal: Microelectronics Journal - Volume 40, Issue 3, March 2009, Pages 611-614
نویسندگان
G. IsiÄ, V. MilanoviÄ, J. RadovanoviÄ, D. Indjin, Z. IkoniÄ, P. Harrison,