کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425209 | 1395850 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of thin silver films on silicon oxide pretreated by low temperature argon plasma
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
In the present study, we investigate the influence of low energy ion bombardment on nucleation and growth of thin silver films on silicon oxide by in situ photoelectron spectroscopy (PES) combined with specific resistivity measurements. Thermally grown thin silicon oxide films were exposed to a low temperature argon plasma for different time intervals resulting in changes in surface chemical composition as monitored by angle-resolved X-ray photoelectron spectroscopy (ARXPS). We demonstrate that irradiation of the oxide surface with low energy ions results in substantially changed nucleation of silver. Furthermore, silver films deposited on plasma treated oxide tend to have lower resistivity which is attributed to the effect of reduced grain boundary and surface roughness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 4, 15 February 2007, Pages 1026-1030
Journal: Surface Science - Volume 601, Issue 4, 15 February 2007, Pages 1026-1030
نویسندگان
Andriy Romanyuk, Roland Steiner, Iris Mack, Peter Oelhafen, Daniel Mathys,