کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5425591 1395861 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic and structural properties of the InP(1 0 0)(2 Ã— 4) surface studied by core-level photoemission and scanning tunneling microscopy
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Electronic and structural properties of the InP(1 0 0)(2 Ã— 4) surface studied by core-level photoemission and scanning tunneling microscopy
چکیده انگلیسی

The (2 × 4)-reconstructed InP(1 0 0) surfaces have been investigated by scanning tunneling microscopy (STM) and synchrotron-radiation core-level photoelectron spectroscopy. STM observations show that the α2 model describes the atomic structure of the InP(1 0 0)(2 × 4) surface in a limited range of the surface-preparation conditions, as predicted theoretically but not previously observed. STM results also support the accuracy of the previously found mixed-dimer structure for the InP(1 0 0)(2 × 4) surface under less P-rich conditions. A study of P 2p core-level photoelectron spectra, measured with different surface-sensitivity conditions, demonstrates that P 2p photoemission from the mixed-dimer InP(1 0 0)(2 × 4) surface consists of at least two surface-core-level-shift (SCLS) components which have kinetic energies approximately 0.4 eV higher and 0.3 eV lower than the bulk emission. On the basis of the surface-sensitivity difference between these SCLSs, they are related to the third-layer and top-layer P sites in the mixed-dimer structure, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 15, 1 August 2006, Pages 3022-3027
نویسندگان
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