کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425675 | 1395862 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layer Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layer](/preview/png/5425675.png)
چکیده انگلیسی
We study the electrical characteristics of a MOS structure in which Pt nanoparticles are embedded. This structure has a tunneling oxide of 3.5Â nm in thickness (a SiO2 thermal oxide layer) on top of a Si wafer, and a control oxide of 27Â nm (HfO2 layer deposited by electron gun evaporation). The nanoparticles are deposited on the SiO2 layer with electron gun evaporation, at room temperature. The electrical study of the structures demonstrates that the “write” process is initiated at low electric fields. This indicates that this type of memory structure can be very promising for the fabrication of high speed MOSFET memory devices with low power consumption. Our charge retention measurements also show promising results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 13, 1 July 2007, Pages 2859-2863
Journal: Surface Science - Volume 601, Issue 13, 1 July 2007, Pages 2859-2863
نویسندگان
Ch. Sargentis, K. Giannakopoulos, A. Travlos, D. Tsamakis,