کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5426268 1395885 2006 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Selforganized nanopatterning of Si(0 0 1)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Selforganized nanopatterning of Si(0 0 1)
چکیده انگلیسی

The (2 × n) superstructure of Si(0 0 1) consists of elongated (2 × 1) reconstructed stripes separated by a dimer-vacancy line every few nanometers, thus offering a means to obtain a nanopattered Si(0 0 1) surface. Scanning tunneling microscopy (STM) investigations of Si(0 0 1) substrates that were deoxidized at 880-920 °C reveal that the formation of the (2 × n) depends strongly on the Si coverage of the topmost surface layer. It forms only in a narrow coverage window ranging from 0.6 to 0.8 ML. Systematic Monte Carlo simulations by an algorithm that combines the diffusion of monomers and dimers with the simultaneous deposition of Si onto the Si(0 0 1) surface, corroborate the STM results and suggest Si deposition as a viable alternative for introducing dimer vacancies in a well-defined manner.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 20, 15 October 2006, Pages 4694-4701
نویسندگان
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